Field induced oxidation of silicon by SPM: study of the mechanism at negative sample voltage by STM, ESTM and AFM

被引：32

作者：

Abadal, G ^{[1
]}

Perez-Murano, F ^{[1
]}

Barniol, N ^{[1
]}

Aymerich, X ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Bellaterra, Spain

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / Suppl 1期

关键词：

D O I：

10.1007/s003390051244

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanometer scale oxidation of silicon surfaces by STM and AFM is an important subject in the SPM community, and its application for nanofabrication has been demonstrated by several groups. Most published work show that the surface can only be oxidized if a positive sample voltage is applied to the sample with respect to the tip (anodization). In the present work we have studied the oxidation mechanism at negative sample voltage with STM and AFM in air and with an electrochemical STM in KF solution. It is demonstrated that two oxidation mechanisms exist, and that the frontier between both oxidation mechanisms is the voltage at which the surface is in the flat band condition. The influence of the electrical field is evaluated and a mechanism for the cathodic oxidation is proposed.

引用

页码：S791 / S795

页数：5

共 22 条

[1] FIELD-INDUCED NANOMODIFICATION ON SILICON (100) WITH SCANNING-TUNNELING-MICROSCOPY [J].

BARNIOL, N ;

PEREZMURANO, F ;

ABADAL, G ;

YE, JH ;

AYMERICH, X .

MICROELECTRONIC ENGINEERING, 1995, 27 (1-4) :27-30

[2] MODIFICATION OF HF-TREATED SILICON (100) SURFACES BY SCANNING TUNNELING MICROSCOPY IN AIR UNDER IMAGING CONDITIONS [J].

BARNIOL, N ;

PEREZMURANO, F ;

AYMERICH, X .

APPLIED PHYSICS LETTERS, 1992, 61 (04) :462-464

[3] THEORY OF THE OXIDATION OF METALS [J].

CABRERA, N ;

MOTT, NF .

REPORTS ON PROGRESS IN PHYSICS, 1948, 12 :163-184

[4] MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].

DAGATA, JA ;

SCHNEIR, J ;

HARARY, HH ;

EVANS, CJ ;

POSTEK, MT ;

BENNETT, J .

APPLIED PHYSICS LETTERS, 1990, 56 (20) :2001-2003

[5] SELECTIVE AREA OXIDATION OF SILICON WITH A SCANNING FORCE MICROSCOPE [J].

DAY, HC ;

ALLEE, DR .

APPLIED PHYSICS LETTERS, 1993, 62 (21) :2691-2693

[6] SCANNING TUNNELING MICROSCOPE STIMULATED OXIDATION OF SILICON (100) SURFACES [J].

FAY, P ;

BROCKENBROUGH, RT ;

ABELN, G ;

SCOTT, P ;

AGARWALA, S ;

ADESIDA, I ;

LYDING, JW .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) :7545-7549

[7] Mechanisms of surface anodization produced by scanning probe microscopes [J].

Gordon, AE ;

Fayfield, RT ;

Litfin, DD ;

Higman, TK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06) :2805-2808

[8] Optical near-field lithography on hydrogen-passivated silicon surfaces [J].

Madsen, S ;

Mullenborn, M ;

Birkelund, K ;

Grey, F .

APPLIED PHYSICS LETTERS, 1996, 69 (04) :544-546

[9] NANOLITHOGRAPHY ON SEMICONDUCTOR SURFACES UNDER AN ETCHING SOLUTION [J].

NAGAHARA, LA ;

THUNDAT, T ;

LINDSAY, SM .

APPLIED PHYSICS LETTERS, 1990, 57 (03) :270-272

[10] STATIONARY MODELING OF 2-DIMENSIONAL STATES IN RESONANT-TUNNELING DEVICES [J].

ORIOLS, X ;

SUNE, J ;

MARTIN, F ;

AYMERICH, X .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) :2135-2137

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