Effect of oxidizing and reducing atmospheres on the electrical properties of dense SnO2-based varistors

被引:61
作者
Santos, MRC
Bueno, PR
Longo, E
Varela, JA
机构
[1] UNESP, Inst Quim, BR-14801970 Araraquara, SP, Brazil
[2] UFSCar, Dept Quim, LIEC, BR-13565905 Sao Carlos, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
electrical properties; grain boundaries; SnO2; Ta2O5; varistors;
D O I
10.1016/S0955-2219(00)00177-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The SnO2 based varistor systems recently presented in the literature appear to have a promising potential in commercial applications. Experimental evidence shows that there is a dependence of nonlinear constant values with thermal treatment under different atmospheres. Thermal treatments in oxygen and nitrogen rich atmospheres at 900 degreesC prove this dependence, indicating that the nonlinear constant values are significantly lower when the material is submitted to a nitrogen atmosphere. Moreover, electrical properties can be restored when the varistor is subjected to thermal treatment at the same temperature in an oxygen atmosphere, indicating that the mechanism seems to be reversible. This paper discusses this behavior focusing in the grain boundary region. Ta2O5 mol% concentrations are also analyzed and the results indicate an optimum Ta2O5 concentration of 0.05 mol% for the electrical properties (alpha = 44 and E-B = 6150 V cm(-1)). (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:161 / 167
页数:7
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