An interesting isotope effect in the Raman excitation profile for HI

被引：4

作者：

Chakrabarti, N

Sathyamurthy, N ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Chem, Kanpur 208016, Uttar Pradesh, India

[2] SN Bose Natl Ctr Basic Sci, Calcutta 700064, W Bengal, India

来源：

JOURNAL OF PHYSICAL CHEMISTRY A | 1998年 / 102卷 / 36期

关键词：

D O I：

10.1021/jp982104q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It is shown that the Raman excitation profile for the fundamental Stokes transition of DI in the vicinity of its electronic transition to the nearby dissociative states exhibits a larger deenhancement than that for HI, as a result of larger interference between the resonance Raman amplitudes for the four closely lying excited (dissociative) electronic states.

引用

页码：7089 / 7092

页数：4

共 14 条

[11] THEORY OF ELECTRONIC BRANCHING IN THE PHOTODISSOCIATION OF HL AND DL [J].