Equilibrium limits of coherency in strained nanowire heterostructures

被引:323
作者
Ertekin, E
Greaney, PA
Chrzan, DC
Sands, TD
机构
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Sci Mat, Berkeley, CA 94720 USA
[3] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
[4] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[5] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1903106
中图分类号
O59 [应用物理学];
学科分类号
摘要
Due to their unique boundary conditions, nanowire heterostructures may exhibit defect-free interfaces even for systems with large lattice mismatch. Heteroepitaxial material integration is limited by lattice mismatches in planar systems, but we use a variational approach to show that nanowire heterostructures are more effective at relieving mismatch strain coherently. This is an equilibrium model based on the Matthews critical thickness in which the lattice mismatch strain is shared by the nanowire overlayer and underlayer, and could as well be partially accomodated by the introduction of a pair of misfit dislocations. The model is highly portable to other nanowire material systems and can be used to estimate critical feature sizes. We find that the critical radius of this system is roughly an order of magnitude larger than the critical thickness of the corresponding thin film/substrate material system. Finite element analysis is used to assess some aspects of the model; in particular, to show that the variational approach describes well the decay of the strain energy density away from the interface. (C) 2005 American Institute of Physics.
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页数:10
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