CRITICAL THICKNESS CONDITION FOR GROWTH OF STRAINED QUANTUM WIRES IN SUBSTRATE V-GROOVES

被引:24
作者
FREUND, LB [1 ]
GOSLING, TJ [1 ]
机构
[1] UNIV CAMBRIDGE,DEPT APPL MATH & THEORET PHYS,CAMBRIDGE CB3 9EW,ENGLAND
关键词
D O I
10.1063/1.113487
中图分类号
O59 [应用物理学];
学科分类号
摘要
The physical system under study is a quantum wire of roughly triangular cross section grown epitaxially in a V-shaped groove on a patterned (100) surface of a cubic substrate. The walls of the groove are {111} planes of the substrate material, so that the wire extends along a 〈110〉 direction. For a given thickness, or depth, of the wire, an analysis is presented which leads to an estimate of the smallest elastic mismatch strain for which the wire remains stable against formation of misfit dislocations, in the spirit of the Matthews-Bladeslee condition, taking into account both the free surface effect and the mismatch strain effect. Comparison is made with the experimental observations of T. Arakawa, S. Tsukamoto, Y. Nagamune, M. Nishioka, J.-H. Lee, and Y. Arakawa [Jpn. J. Appl. Phys. 32, L1377 (1993)].© 1995 American Institute of Physics.
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页码:2822 / 2824
页数:3
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