FABRICATION OF INGAAS STRAINED QUANTUM-WIRE STRUCTURES USING SELECTIVE-AREA METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH

被引：31

作者：

ARAKAWA, T ^{[1
]}

TSUKAMOTO, S ^{[1
]}

NAGAMUNE, Y ^{[1
]}

NISHIOKA, M ^{[1
]}

LEE, JH ^{[1
]}

ARAKAWA, Y ^{[1
]}

机构：

[1] UNIV TOKYO, ADV SCI & TECHNOL RES CTR, TOKYO 153, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 10A期

关键词：

SELECTIVE-AREA MOCVD GROWTH; STRAINED QUANTUM WIRE; INGAAS GAAS; PHOTOLUMINESCENCE; CRITICAL THICKNESS;

D O I：

10.1143/JJAP.32.L1377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated InxGa1-x As strained quantum wire structures with various In compositions using a selective-area metal-organic chemical vapor deposition growth technique. Photoluminescence (PL) measurements at 14 K demonstrated that strained quantum wires of high quality were obtained when x is less than 0.35. Change of the full width at half-maximum of the PL peaks indicates that the structural dimensions of the quantum wires exceeded the critical thickness at around x=0.4.

引用

页码：L1377 / L1379

页数：3

共 14 条

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