FABRICATION OF GAAS QUANTUM WIRES (SIMILAR-TO-10 NM) BY METALORGANIC CHEMICAL-VAPOR SELECTIVE DEPOSITION GROWTH

被引：64

作者：

TSUKAMOTO, S ^{[1
]}

NAGAMUNE, Y ^{[1
]}

NISHIOKA, M ^{[1
]}

ARAKAWA, Y ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR MEGURO KU,TOKYO 153,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.110041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs triangular-shaped quantum wires with the lateral width of approximately 10 nm are fabricated by metalorganic chemical vapor selective deposition growth technique. The lateral dimension is determined by both photoluminescence (PL) measurement and a high-resolution scanning electron micrograph observation. A systematic change in the size of the quantum wire exhibits consistent blue shifts of the PL peak keeping high intensities, which demonstrates enhanced two-dimensional quantum confinement with the material of high quality.

引用

页码：355 / 357

页数：3

共 14 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
ARAKAWA, Y
SAKAKI, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 939 - 941
[2] QUANTUM NOISE AND DYNAMICS IN QUANTUM WELL AND QUANTUM WIRE LASERS
ARAKAWA, Y
VAHALA, K
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (09) : 950 - 952
[3] PATTERNED QUANTUM WELL HETEROSTRUCTURES GROWN BY OMCVD ON NON-PLANAR SUBSTRATES - APPLICATIONS TO EXTREMELY NARROW SQW LASERS
BHAT, R
KAPON, E
HWANG, DM
KOZA, MA
YUN, CP
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 850 - 856
[4] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS
BOGARDUS, EH
BEBB, HB
[J]. PHYSICAL REVIEW, 1968, 176 (03): : 993 - &
[5] SUBBAND STRUCTURES OF SEMICONDUCTOR QUANTUM WIRES FROM THE EFFECTIVE BOND-ORBITAL MODEL
CITRIN, DS
CHANG, YC
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (01) : 161 - 168
[6] NEW GAAS QUANTUM WIRES ON (111)B FACETS BY SELECTIVE MOCVD
FUKUI, T
ANDO, S
[J]. ELECTRONICS LETTERS, 1989, 25 (06) : 410 - 412
[7] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927
[8] APPLICATION OF SELECTIVE EPITAXY TO FABRICATION OF NANOMETER SCALE WIRE AND DOT STRUCTURES
LEBENS, JA
TSAI, CS
VAHALA, KJ
KUECH, TF
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (26) : 2642 - 2644
[9] MAILE BE, 1989, APPL PHYS LETT, V57, P1552
[10] TANAKA T, 1991, 52ND P AUT M JAP SOC

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