FACET MODULATION SELECTIVE EPITAXY - A TECHNIQUE FOR QUANTUM-WELL WIRE DOUBLET FABRICATION

被引：24

作者：

TSAI, CS

LEBENS, JA

AHN, CC

NOUHI, A

VAHALA, KJ

机构：

[1] Department of Applied Physics, Mail Stop 128-95, California Institute of Technology, Pasadena

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.106976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The technique of facet modulation selective epitaxy and its application to quantum-well wire doublet fabrication are described. Successful fabrication of wire doublets in the AlxGa1-xAs material system is achieved. The smallest wire fabricated has a crescent cross section less than 140 angstrom thick and less than 1400 angstrom wide. Backscattered electron images, transmission electron micrographs, cathodoluminescence spectra, and spectrally resolved cathodoluminescence images of the wire doublets are presented.

引用

页码：240 / 242

页数：3

共 15 条

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