FACET GROWTH OF ALGAAS ON GAAS WITH SIO2 GRATINGS BY MOCVD AND APPLICATIONS TO QUANTUM WELL WIRES

被引：70

作者：

ANDO, S

FUKUI, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 04期

关键词：

D O I：

10.1016/0022-0248(89)90301-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：646 / 652

页数：7

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