Effect of the quantum-dot surface density in the active region on injection-laser characteristics

被引：18

作者：

Kovsh, AR ^{[1
]}

Zhukov, AE

Egorov, AY

Ustinov, VM

Shernyakov, YM

Maksimov, MV

Tsatsul'nikov, AF

Volovik, BV

Lunev, AV

Ledentsov, NN

Kop'ev, PS

Alferov, ZI

Bimberg, D

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1187532

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new method of increasing the surface density of self-organized semiconductor quantum dots formed by molecular-beam epitaxy is proposed. A comparative analysis of the characteristics of injection lasers based on quantum-dot arrays with different surface density is made. It is shown that the use of quantum-dot arrays of higher density makes it possible to decrease substantially the threshold current density in the region of large losses and to increase the maximum gain and the maximum output radiation power. (C) 1998 American Institute of Physics. [S1063-7826(98)02009-2].A new method of increasing the surface density of self-organized semiconductor quantum dots formed by molecular-beam epitaxy is proposed. A comparative analysis of the characteristics of injection lasers based on quantum-dot arrays with different surface density is made. It is shown that the use of quantum-dot arrays of higher density makes it possible to decrease substantially the threshold current density in the region of large losses and to increase the maximum gain and the maximum output radiation power. (C) 1998 American Institute of Physics. [S1063-7826(98)02009-2].

引用

页码：997 / 1000

页数：4

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