Optical investigation of defects in AgGaS2, and CuGaS2

被引：35

作者：

Choi, IH

Yu, PY

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[2] LAWRENCE BERKELEY LAB,DIV SCI MAT,BERKELEY,CA 94720

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1996年 / 57卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

semiconductors; Raman spectroscopy; defects; luminescence;

D O I：

10.1016/0022-3697(96)00039-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Defects in two chalcopyrite semiconductors AgGaS2 and CuGaS2 have been studied by a combination of several optical techniques including absorption, emission, Raman scattering and their excitation spectroscopies. From these measurements we have determined the binding energies of both shallow and deep donors and accepters in the two materials.

引用

页码：1695 / 1704

页数：10