A HARPSS polysilicon vibrating ring gyroscope

被引:281
作者
Ayazi, F [1 ]
Najafi, K
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] Univ Michigan, Ctr Integrated Microsyst, Dept Elect & Comp Sci, Ann Arbor, MI 48109 USA
关键词
deep trench etching; gyroscope; high aspect-ratio; microelectromechanical systems (MEMS); silicon micromachining; vibratory gyroscope; yaw rate sensor;
D O I
10.1109/84.925732
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design, fabrication, and testing of an 80-mum-thick, 1.1 mm in diameter high aspect-ratio (20:1) polysilicon ring gyroscope (PRG). The vibrating ring gyroscope was fabricated through the high aspect-ratio combined poly and single-crystal silicon MEMS technology (HARPSS), This all-silicon single-wafer technology is capable of producing electrically isolated vertical electrodes as tall as the main body structure 50 to 100's (mum tall) with various size air-gaps ranging from submicron to tens of microns. A detailed analysis has been performed to determine the overall sensitivity of the vibrating ring gyroscope and identify its scaling limits. An open-loop sensitivity of 200 muV/deg/s in a dynamic range of +/- 250 deg/s was measured under low vacuum level for a prototype device tested in hybrid format. The resolution for a PRG with a quality factor (Q) of 1200, drive amplitude of 0.15 mum, and sense node parasitic capacitances of 2 pF was measured to be less than 1 deg/s in 1 Hz bandwidth, limited by the noise from the circuitry. Elimination of the parasitic capacitances and improvement in the quality factor of the ring structure are expected to reduce the resolution to 0.01 deg/s/(Hz)(0.5).
引用
收藏
页码:169 / 179
页数:11
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