Activity and current status of R&D on space solar cells in Japan

被引:32
作者
Imaizumi, M
Matsuda, S
Kawakita, S
Sumita, T
Takamoto, T
Ohshima, T
Yamaguchi, M
机构
[1] ISTA, Tsukuba Space Ctr, Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan
[2] Sharp Co Ltd, Yamato Koriyama, Nara 6392198, Japan
[3] Japan Atom Energy Res Inst, Taksaki, Gunma 3701292, Japan
[4] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
来源
PROGRESS IN PHOTOVOLTAICS | 2005年 / 13卷 / 06期
关键词
space solar cell; triple-junction; dual-junction; InGaP; GaAs; Ge; CIGS; radiation tolerance; flight demonstration;
D O I
10.1002/pip.644
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Japan's Research and Development (R&D) activities on high-performance III-V compound space solar cells are presented. Studies of new CuInGaSe2 thin-film terrestrial solar cells for space applications are also discussed. Performance and radiation characteristics of a newly developed InGaP/GaAs/Ge triple-junction space solar cell, including radiation response, results of a flight demonstration test of InGaP/GaAs dual-junction solar cells and CuInGaSe2 thin-film solar cells, and radiation response of three component sub-cells are explained. This study confirms superior radiation tolerance of InGaP/GaAs dual-junction cells and CuInGaSe2 thin-film cells by space flight experiments. Copyright (c) 2005 John Wiley & Sons, Ltd.
引用
收藏
页码:529 / 543
页数:15
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