Annealing enhancement effect by light illumination on proton irradiated Cu(In,Ga)Se2 thin-film solar cells

被引：49

作者：

Kawakita, S

Imaizumi, M

Yamaguchi, M

Kushiya, K

Ohshima, T

Itoh, H

Matsuda, S

机构：

[1] Natl Space Dev Agcy Japan, Tsukuba, Ibaraki 3058505, Japan

[2] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan

[3] Cent R&D Lab, Showa Shell Sekiyu KK, Atsugi, Kanagawa 2430206, Japan

[4] Japan Atom Energy Res Inst, Takasaki, Gumma 3701292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 7A期

关键词：

space solar cell; Cu(InGa)Se-2; radiation effect; annealing rate;

D O I：

10.1143/JJAP.41.L797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we investigated the high radiation tolerance of copper indium gallium di-selenide (CIGS) thin-film solar cells by conducting in situ measurements of short circuit current and open circuit voltage of CIGS thin-film solar cells during and after proton irradiation under short circuit condition. We found that the annealing rate of proton-induced defects in CIGS thin-film solar cells under light illumination with an AM0 solar simulator is higher than that under dark conditions. The activation energy of proton-induced defects in the CIGS thin-film solar cells with (without) light illumination is 0.80 eV (0.92 eV), which implies on enhanced defect annealing rate in CIGS thin-film solar cells due to minority-carrier injection.

引用

页码：L797 / L799

页数：3

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