Microstructural and micromagnetic characterization of thin film magnetic tunnel junctions

被引：15

作者：

Dunin-Borkowski, RE ^{[1
]}

McCartney, MR

Smith, DJ

Gider, S

Runge, BU

Parkin, SSP

机构：

[1] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

[2] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.370491

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution electron microscopy, Lorentz microscopy, and off-axis electron holography have been used to characterize magnetic tunnel junctions. Observations in cross section show that the tunnel barriers are slightly narrower and smoother after annealing at temperatures up to 350 degrees C. The demagnetization of a magnetically hard CoPtCr reference layer through repeated magnetization reversal of a soft layer of either Co or Ni40Fe60 is likely to originate from magnetic fringing fields at Neel walls, which form in the soft layers close to the coercive field. (C) 1999 American Institute of Physics. [S0021-8979(99)61308-1].

引用

页码：4815 / 4817

页数：3

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