Planar microdischarge arrays

被引：28

作者：

Frame, JW ^{[1
]}

Eden, JG ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Everitt Lab, Urbana, IL 61801 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 15期

关键词：

D O I：

10.1049/el:19981018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Planar arrays of 400 mu m diameter discharge devices fabricated on silicon with an anode-cathode spacing of 1 mm and device separations as small as 0.8 mm are reported. Operated in parallel with a single ballast and specific power loadings in the discharge up to similar to 40 kW-cm(-3), these arrays produce continuous emission from the atomic rare gases and transient molecules such as the rare gas-halide excimer, xenon-monoiodide (XeI).

引用

页码：1529 / 1531

页数：3

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