Effects of epitaxial lift-off on the DC, RF, and thermal properties of MESFET's on various host materials

被引：14

作者：

Morf, T ^{[1
]}

Biber, C

Bachtold, W

机构：

[1] ETH Zurich, Elect Lab, CH-8092 Zurich, Switzerland

[2] Lab Electromagnet Fields & Microwave Elect, CH-8092 Zurich, Switzerland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 07期

关键词：

CMOS; GaAs; hybrid integrated circuit fabrication; microwave integrated circuits; thin-film circuits thermal factors;

D O I：

10.1109/16.701469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present an in-depth investigation on the effects of epitaxial lift-off (ELO) on GaAs MESFET's, DC and microwave characteristics as well as thermal effects are considered. Devices were fabricated on a GaAs foundry process and transplanted by ELO. ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently re-attached to a new host substrate. Host materials considered are InP, quartz and silicon with resistivities ranging from 11 m Omega cm to 50 Omega cm.

引用

页码：1407 / 1413

页数：7

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