CHARACTERIZATION OF THIN ALGAAS/INGAAS/GAAS QUANTUM-WELL STRUCTURES BONDED DIRECTLY TO SIO2/SI AND GLASS SUBSTRATES

被引:42
作者
KLEM, JF
JONES, ED
MYERS, DR
LOTT, JA
机构
关键词
D O I
10.1063/1.343850
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:459 / 462
页数:4
相关论文
共 10 条
[1]   SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].
CHAND, N ;
PEOPLE, R ;
BAIOCCHI, FA ;
WECHT, KW ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817
[2]   DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J].
FISCHER, R ;
NEUMAN, D ;
ZABEL, H ;
MORKOC, H ;
CHOI, C ;
OTSUKA, N .
APPLIED PHYSICS LETTERS, 1986, 48 (18) :1223-1225
[3]   GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].
FISCHER, R ;
MASSELINK, WT ;
KLEM, J ;
HENDERSON, T ;
MCGLINN, TC ;
KLEIN, MV ;
MORKOC, H ;
MAZUR, JH ;
WASHBURN, J .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :374-381
[4]  
KLEM JF, 1989, I PHYS C SER
[5]   WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES [J].
LASKY, JB .
APPLIED PHYSICS LETTERS, 1986, 48 (01) :78-80
[6]   HIGH-FLUENCE ION DAMAGE EFFECTS IN AR-IMPLANTED (INGA)AS/GAAS STRAINED-LAYER SUPERLATTICES [J].
MYERS, DR ;
ARNOLD, GW ;
HILLS, CR ;
DAWSON, LR ;
DOYLE, BL .
APPLIED PHYSICS LETTERS, 1987, 51 (11) :820-822
[7]  
MYERS DR, 1988, 1988 IEEE IEDM, P704
[8]   OPTICAL AND STRUCTURAL-PROPERTIES OF GAAS GROWN ON (100)SI BY MOLECULAR-BEAM EPITAXY [J].
STOLZ, W ;
GUIMARAES, FEG ;
PLOOG, K .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) :492-499
[10]   EXTREME SELECTIVITY IN THE LIFT-OFF OF EPITAXIAL GAAS FILMS [J].
YABLONOVITCH, E ;
GMITTER, T ;
HARBISON, JP ;
BHAT, R .
APPLIED PHYSICS LETTERS, 1987, 51 (26) :2222-2224