HIGH-FLUENCE ION DAMAGE EFFECTS IN AR-IMPLANTED (INGA)AS/GAAS STRAINED-LAYER SUPERLATTICES

被引：7

作者：

MYERS, DR

ARNOLD, GW

HILLS, CR

DAWSON, LR

DOYLE, BL

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.98823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：820 / 822

页数：3

共 15 条

[1]

ARNOLD GW, 1986, DEC P MAT RES SOC S

[2]

CAMRAS MD, 1983, I PHYSICS C SERIES, V65, P233

[3] SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE [J].

EERNISSE, EP .

APPLIED PHYSICS LETTERS, 1971, 18 (12) :581-&

[4] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

FRITZ, IJ ;

PICRAUX, ST ;

DAWSON, LR ;

DRUMMOND, TJ ;

LAIDIG, WD ;

ANDERSON, NG .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969

[5] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].

HORNSTRA, J ;

BARTELS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517

[6] ZINC-IMPLANTATION-DISORDERED (INGA)AS/GAAS STRAINED-LAYER SUPERLATTICE DIODES [J].

MYERS, DR ;

ARNOLD, GW ;

ZIPPERIAN, TE ;

DAWSON, LR ;

BIEFELD, RM ;

FRITZ, IJ ;

BARNES, CE .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :1131-1134

[7] TEMPERATURE-DEPENDENT DAMAGE PRODUCTION IN ION-IMPLANTED STRAINED-LAYER SUPERLATTICES [J].

MYERS, DR ;

ARNOLD, GW ;

DAWSON, LR ;

BIEFELD, RM ;

HILLS, CR ;

DOYLE, BL .

APPLIED PHYSICS LETTERS, 1987, 51 (07) :517-519

[8] CHARACTERIZATION OF ION-IMPLANTATION DOPING OF STRAINED-LAYER SUPERLATTICES .1. STRUCTURAL-PROPERTIES [J].

MYERS, DR ;

PICRAUX, ST ;

DOYLE, BL ;

ARNOLD, GW ;

BIEFELD, RM .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3631-3640

[9]

MYERS DR, 1985, NUCL INSTRUM METHO B, V10, P756

[10]

NEUMAN DA, 1985, MATERIALS RES SOC S, V37, P47

← 1 2 →