ZINC-IMPLANTATION-DISORDERED (INGA)AS/GAAS STRAINED-LAYER SUPERLATTICE DIODES

被引：18

作者：

MYERS, DR

ARNOLD, GW

ZIPPERIAN, TE

DAWSON, LR

BIEFELD, RM

FRITZ, IJ

BARNES, CE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期

关键词：

D O I：

10.1063/1.337356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1131 / 1134

页数：4

共 18 条

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[9] ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS [J].

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JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4038-4046

[10] DISORDER OF AN INXGA1-XAS-GAAS SUPER-LATTICE BY ZN DIFFUSION [J].

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