OPTICAL AND STRUCTURAL-PROPERTIES OF GAAS GROWN ON (100)SI BY MOLECULAR-BEAM EPITAXY

被引:105
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STOLZ, W
GUIMARAES, FEG
PLOOG, K
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10.1063/1.340269
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O59 [应用物理学];
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页码:492 / 499
页数:8
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共 19 条
[1]   GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].
AKIYAMA, M ;
KAWARADA, Y ;
KAMINISHI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11) :L843-L845
[2]   INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON [J].
BIEGELSEN, DK ;
PONCE, FA ;
SMITH, AJ ;
TRAMONTANA, JC .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1856-1859
[3]   PHOTOLUMINESCENCE AND X-RAY-PROPERTIES OF HETEROEPITAXIAL GALLIUM-ARSENIDE ON SILICON [J].
DUNCAN, WM ;
LEE, JW ;
MATYI, RJ ;
LIU, HY .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2161-2164
[4]   GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].
FISCHER, R ;
MASSELINK, WT ;
KLEM, J ;
HENDERSON, T ;
MCGLINN, TC ;
KLEIN, MV ;
MORKOC, H ;
MAZUR, JH ;
WASHBURN, J .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :374-381
[5]   MODULATED PIEZOREFLECTANCE IN SEMICONDUCTORS [J].
GAVINI, A ;
CARDONA, M .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02) :672-+
[6]  
KROMER H, 1987, J CRYST GROWTH, V81, P193
[7]   EFFECT OF MISMATCH STRAIN ON BAND-GAP IN III-V SEMICONDUCTORS [J].
KUO, CP ;
VONG, SK ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5428-5432
[8]  
MADELUNG O, 1982, LANDOLTBORNSTEIN, V17
[9]   TEM COMBINED WITH ALXGA1-XAS MARKER LAYERS AS A TECHNIQUE FOR THE STUDY OF GAAS MBE GROWTH [J].
MAZUR, JH ;
WASHBURN, J ;
FISCHER, R ;
HENDERSON, T ;
KLEM, J ;
MASSELINK, WT ;
KOPP, W ;
MORKOC, H .
ULTRAMICROSCOPY, 1985, 18 (1-4) :371-377
[10]   STRUCTURAL-PROPERTIES OF GAAS ON (001) ORIENTED SI AND GE SUBSTRATES [J].
NEUMANN, DA ;
ZABEL, H ;
FISCHER, R ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) :1023-1029