TEM COMBINED WITH ALXGA1-XAS MARKER LAYERS AS A TECHNIQUE FOR THE STUDY OF GAAS MBE GROWTH

被引：1

作者：

MAZUR, JH

WASHBURN, J

FISCHER, R

HENDERSON, T

KLEM, J

MASSELINK, WT

KOPP, W

MORKOC, H

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

[3] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ULTRAMICROSCOPY | 1985年 / 18卷 / 1-4期

关键词：

D O I：

10.1016/0304-3991(85)90155-X

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：371 / 377

页数：7

共 10 条

[1] GAAS/ALGAAS MODFETS GROWN ON (100) GE [J].

FISCHER, R ;

KLEM, J ;

HENDERSON, T ;

MASSELINK, WT ;

KOPP, W ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :456-457

[2]

FISCHER R, J APPL PHYS

[3]

GJOSTEIN NA, 1963, METAL SURFACES STRUC, pH99

[4]

KOTELAYANSKII IM, 1976, IZV AKAD NAUK SSSR N, V12, P1014

[5]

MAZUR JH, UNPUB

[6]

MAZUR JH, 1983, I PHYS C SER, V67, P77

[7] ANTIPHASE DOMAIN-STRUCTURES IN GAP AND GAAS EPITAXIAL LAYERS GROWN ON SI AND GE [J].

MORIZANE, K .

JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) :249-254

[8] DIRECT OBSERVATION OF LATTICE ARRANGEMENT IN MBE GROWN GAAS-ALGAAS SUPER-LATTICES [J].

OKAMOTO, H ;

SEKI, M ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (06) :L367-L369

[9]

PETROFF PM, 1979, J CRYSTAL GROWTH, V46, P1972

[10] STRUCTURAL EVALUATION OF HETERO-EPITAXIAL INTERFACES BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J].

WRIGHT, AC ;

WILLIAMS, JO .

MATERIALS LETTERS, 1985, 3 (03) :80-88

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