Spectral and optical properties of doped graphene with charged impurities in the self-consistent Born approximation

被引：9

作者：

de Juan, F. ^{[1
]}

Hwang, E. H. ^{[2
]}

Vozmediano, M. A. H. ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[2] Univ Maryland, Condensed Matter Theory Ctr, Dept Phys, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 24期

关键词：

ELECTRONIC-PROPERTIES; TRANSPORT-PROPERTIES; STATES; SCATTERING; DYNAMICS; DISORDER; DENSITY; SYSTEMS; GAS;

D O I：

10.1103/PhysRevB.82.245418

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spectral and transport properties of doped (or gated) graphene with long-range charged impurities are discussed within the self-consistent Born approximation. It is shown how, for impurity concentrations n(imp) greater than or similar to n a finite density of states appears at the Dirac point, the one-particle lifetime no longer scales linearly with the Fermi momentum, and the line shapes in the spectral function become non-Lorentzian. These behaviors are different from the results calculated within the Born approximation. We also calculate the optical conductivity from the Kubo formula by using the self-consistently calculated spectral function in the presence of charged impurities.

引用

页数：10

共 72 条

[11] Friedel oscillations, impurity scattering, and temperature dependence of resistivity in graphene [J].