Raman and photoluminescence spectroscopy from n- and p-type 6H-SIC alpha-particle irradiated

被引：13

作者：

Kunert, HW ^{[1
]}

Maurice, T

Barnas, J

Malherbe, J

Brink, DJ

Prinsloo, L

机构：

[1] Univ Pretoria, Dept Phys, ZA-0001 Pretoria, South Africa

[2] SOITEC, Bermi 38, France

[3] Adam Mickiewicz Univ, Dept Phys, PL-61614 Poznan, Poland

[4] Univ Pretoria, Dept Chem, ZA-0001 Pretoria, South Africa

来源：

VACUUM | 2005年 / 78卷 / 2-4期

关键词：

group theory; phonons in crystal lattices; photoluminescence and Raman spectroscopy;

D O I：

10.1016/j.vacuum.2005.01.075

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report optical properties of n-nitrogen and p-boron-type 6H-SiC alpha-particle irradiated at doses 10(12)-10(14)CM(-2). The back scattering Raman Spectroscopy (RS) from the reference samples reveals all the four first-order Raman active modes (1-RAMs) as well as all the 12th folded vibrational modes (FVMs) previously observed and tabulated. The irradiation at low doses induces several Raman optically active bands in the n- and p-type 6H-SiC. In order to identify the new modes we have derived some group-theoretical Raman selection rules (RSRs). Using the RSRs we have distinguished treatment-induced modes from the first-order RAM belonging to 6H-SiC. Moreover, by means of the RSRs we have made an attempt to identify the origins of some of the second-order phonons traditionally labelled as: a, b, h. Photoluminescence spectroscopy (PL) also monitors some new bands treatment induced. Some of them are temperature and laser power dependent. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：503 / 508

页数：6

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