Optical characterization of SiC materials: Bulk and implanted layers

被引：11

作者：

Camassel, J

Vicente, P

Falkovski, LA

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, FR-34095 Montpellier 5, France

[2] CNRS, FR-34095 Montpellier 5, France

[3] NOVASiC, FR-73600 Moutiers, France

[4] Landau Inst, Moscow, Russia

来源：

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 | 2001年 / 353-356卷

关键词：

implantation damage; micro-Raman spectroscopy; subsurface damage; wafering;

D O I：

10.4028/www.scientific.net/MSF.353-356.335

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is shown that micro-Raman spectroscopy is a sensitive tool to probe the effect of subsurface and implantation damage in SiC. The investigation of subsurface damage is based on the determination of the free carrier density profile in n-type material. The investigation of implantation damage calls for an investigation of the activation of the 1-phonon DOS, combined with a study of the broadening and shift of the first-order Raman modes.

引用

页码：335 / 340

页数：6

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