Dependence of the refractive index of AlxGa1-xN on temperature and composition at elevated temperatures

被引:123
作者
Tisch, U [1 ]
Meyler, B
Katz, O
Finkman, E
Salzman, J
机构
[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
[2] Technion Israel Inst Technol, Ctr Microelect Res, IL-32000 Haifa, Israel
关键词
D O I
10.1063/1.1341212
中图分类号
O59 [应用物理学];
学科分类号
摘要
The refractive index of hexagonal AlxGa1-xN at room temperature and its temperature dependence at elevated temperatures have been determined with high accuracy by spectroscopic ellipsometry. Measurements have been conducted on samples with aluminum molar fractions ranging from 0% to 65% and at temperatures between 290 and 580 K. The refractive index in the transparent spectral region has been determined as a function of photon energy, using the Kramers-Kronig relations with suitable approximations, and applying a multilayer model. An analytical expression for the composition and temperature dependent refractive index in the transparent region, above room temperature, has been obtained. The refractive index has been found to increase with increasing temperature. The shift of the refractive index is strongest for GaN and decreases for AlGaN with increasing aluminum molar fraction. The impact on the properties of GaN based waveguides is illustrated by a slab waveguide calculation. (C) 2001 American Institute of Physics.
引用
收藏
页码:2676 / 2685
页数:10
相关论文
共 40 条
  • [1] MODEL DIELECTRIC-CONSTANTS OF GAP, GAAS, GASB, INP, INAS, AND INSB
    ADACHI, S
    [J]. PHYSICAL REVIEW B, 1987, 35 (14): : 7454 - 7463
  • [2] OPTICAL-PROPERTIES OF ALXGA1-XAS ALLOYS
    ADACHI, S
    [J]. PHYSICAL REVIEW B, 1988, 38 (17): : 12345 - 12352
  • [3] Raman analysis of the configurational disorder in AlxGa1-xN films
    Bergman, L
    Bremser, MD
    Perry, WG
    Davis, RF
    Dutta, M
    Nemanich, RJ
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2157 - 2159
  • [4] Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers
    Bergmann, MJ
    Özgür, Ü
    Casey, HC
    Everitt, HO
    Muth, JF
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (01) : 67 - 69
  • [5] Growth and doping of AlxGa1-xN deposited directly on alpha(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy
    Bremser, MD
    Perry, WG
    Edwards, NV
    Zheleva, T
    Parikh, N
    Aspnes, DE
    Davis, RF
    [J]. GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 195 - 200
  • [6] Optical constants of epitaxial AlGaN films and their temperature dependence
    Brunner, D
    Angerer, H
    Bustarret, E
    Freudenberg, F
    Hopler, R
    Dimitrov, R
    Ambacher, O
    Stutzmann, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) : 5090 - 5096
  • [7] Cullity BD, 1978, ELEMENTS XRAY DIFFRA
  • [8] Djurisic AB, 1999, PHYS STATUS SOLIDI B, V216, P199, DOI 10.1002/(SICI)1521-3951(199911)216:1<199::AID-PSSB199>3.0.CO
  • [9] 2-X
  • [10] Modeling the optical constants of hexagonal GaN, InN, and AlN
    Djurisic, AB
    Li, EH
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) : 2848 - 2853