Ab initio electronic band structure calculation of InP in the wurtzite phase

被引:40
作者
Dacal, Luis C. O. [2 ]
Cantarero, Andres [1 ]
机构
[1] Univ Valencia, Inst Mat Sci, E-46071 Valencia, Spain
[2] IEAv CTA, Inst Estudos Avancados, BR-12228970 Sao Jose Dos Campos, SP, Brazil
关键词
Semiconductor; InP wurtzite; Electronic band structure; INDIUM-PHOSPHIDE NANOWIRES; PHOTOLUMINESCENCE; HETEROSTRUCTURES; APPROXIMATION;
D O I
10.1016/j.ssc.2011.03.003
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a = 0.4150 nm, c = 0.6912 nm, and an internal parameter u = 0.371, showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actual wurtzite structure is compressed (-1.3%) in plane and expanded (0.7%) along the c-direction. The value of the calculated band gaps agrees well with recent optical experiments. The calculations are also consistent with the optical transitions found using polarized light. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:781 / 784
页数:4
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