Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations

被引：57

作者：

Gadret, E. G. ^{[1
]}

Dias, G. O. ^{[1
]}

Dacal, L. C. O. ^{[2
,3
]}

de Lima, M. M., Jr. ^{[2
]}

Ruffo, C. V. R. S. ^{[1
]}

Iikawa, F. ^{[1
]}

Brasil, M. J. S. P. ^{[1
]}

Chiaramonte, T. ^{[1
]}

Cotta, M. A. ^{[1
]}

Tizei, L. H. G. ^{[1
]}

Ugarte, D. ^{[1
]}

Cantarero, A. ^{[2
]}

机构：

[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, Campinas, SP, Brazil

[2] Univ Valencia, Inst Ciencia Mat, Valencia, Spain

[3] CTA, Inst Estudos Avancados IEAv, Sao Jose Dos Campos, SP, Brazil

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 12期

基金：

巴西圣保罗研究基金会;

关键词：

ZINCBLENDE;

D O I：

10.1103/PhysRevB.82.125327

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on "ab initio" calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, respectively, which are in good agreement with the experimental results.

引用

页数：5

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