Au-free epitaxial growth of InAs nanowires

被引:194
作者
Mandl, Bernhard
Stangl, Julian
Martensson, Thomas
Mikkelsen, Anders
Eriksson, Jessica
Karlsson, Lisa S.
Bauer, Gunther
Samuelson, Lars
Seifert, Werner
机构
[1] Lund Univ, S-22100 Lund, Sweden
[2] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
[3] Lund Univ, nCHREM, S-22100 Lund, Sweden
基金
奥地利科学基金会;
关键词
D O I
10.1021/nl060452v
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.
引用
收藏
页码:1817 / 1821
页数:5
相关论文
共 25 条
[1]   Nanowire resonant tunneling diodes [J].
Björk, MT ;
Ohlsson, BJ ;
Thelander, C ;
Persson, AI ;
Deppert, K ;
Wallenberg, LR ;
Samuelson, L .
APPLIED PHYSICS LETTERS, 2002, 81 (23) :4458-4460
[2]   Tunable effective g factor in InAs nanowire quantum dots -: art. no. 201307 [J].
Björk, MT ;
Fuhrer, A ;
Hansen, AE ;
Larsson, MW ;
Fröberg, LE ;
Samuelson, L .
PHYSICAL REVIEW B, 2005, 72 (20)
[3]   One-dimensional heterostructures in semiconductor nanowhiskers [J].
Björk, MT ;
Ohlsson, BJ ;
Sass, T ;
Persson, AI ;
Thelander, C ;
Magnusson, MH ;
Deppert, K ;
Wallenberg, LR ;
Samuelson, L .
APPLIED PHYSICS LETTERS, 2002, 80 (06) :1058-1060
[4]  
BRYLLERT T, 2005, DEV RES C, P157
[5]   Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires [J].
Dick, KA ;
Deppert, K ;
Mårtensson, T ;
Mandl, B ;
Samuelson, L ;
Seifert, W .
NANO LETTERS, 2005, 5 (04) :761-764
[6]   GROWTH AND OPTICAL-PROPERTIES OF NANOMETER-SCALE GAAS AND INAS WHISKERS [J].
HIRUMA, K ;
YAZAWA, M ;
KATSUYAMA, T ;
OGAWA, K ;
HARAGUCHI, K ;
KOGUCHI, M ;
KAKIBAYASHI, H .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (02) :447-462
[7]   Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms [J].
Kamins, TI ;
Williams, RS ;
Basile, DP ;
Hesjedal, T ;
Harris, JS .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1008-1016
[8]   Defect-free InP nanowires grown in [001] direction on InP(001) [J].
Krishnamachari, U ;
Borgstrom, M ;
Ohlsson, BJ ;
Panev, N ;
Samuelson, L ;
Seifert, W ;
Larsson, MW ;
Wallenberg, LR .
APPLIED PHYSICS LETTERS, 2004, 85 (11) :2077-2079
[9]   STABILITY OF WURTZITE STRUCTURE [J].
LAWAETZ, P .
PHYSICAL REVIEW B, 1972, 5 (10) :4039-&
[10]   Semiconductor nanowires: synthesis, structure and properties [J].
Lee, ST ;
Wang, N ;
Lee, CS .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2000, 286 (01) :16-23