Spin-coatable inorganic gate dielectric for organic thin-film transistors

被引：15

作者：

Han, K ^{[1
]}

Park, SY ^{[1
]}

Kim, MJ ^{[1
]}

Lee, HH ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 25期

关键词：

D O I：

10.1063/1.2147707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polymer gate dielectrics have been used for organic thin-film transistors (OTFTs) primarily because of wet processability. An inorganic dielectric, if it is wet processable, can remedy many problems associated with a polymer dielectric. A siloxane-based spin-on glass is used to show that it can lead to better device performance than the best polymer dielectric known, thus paving the way to replacing the polymer dielectric for OTFTs, except in flexible device applications.

引用

页码：1 / 3

页数：3

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