ZnSe thin films by chemical bath deposition method

被引：139

作者：

Lokhande, CD

Patil, PS

Tributsch, H

Ennaoui, A

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, Bereich Phys Chem, Abt CG, D-14109 Berlin, Germany

[2] Hahn Meitner Inst Kernforsch Berlin GmbH, Bereich Phys Chem, Abt CS, D-14109 Berlin, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1998年 / 55卷 / 04期

关键词：

thin films; ZnSe; chemical bath deposition; film characterization;

D O I：

10.1016/S0927-0248(98)00112-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The ZnSe thin films have been deposited onto glass substrates by the simple chemical bath deposition method using selenourea as a selenide ion source from an aqueous alkaline medium. The effect of Zn ion concentration, bath temperature and deposition time period on the quality and thickness of ZnSe films has been studied. The ZnSe films have been characterized by XRD, TEM, EDAX? TRMC (time-resolved microwave conductivity), optical absorbance and RES techniques for their structural, compositional, electronic and optical properties. The as-deposited ZnSe films are found to be amorphous, Zn rich with optical band gap, Eg, equal to 2.9 eV. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：379 / 393

页数：15

共 24 条

[1] CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J].