Piezoresistive characteristics of short-channel MOSFETs on (100) silicon

被引：127

作者：

Bradley, AT ^{[1
]}

Jaeger, RC

Suhling, JC

O'Connor, KJ

机构：

[1] Univ Tennessee, Dept Elect Engn, Knoxville, TN 37916 USA

[2] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36830 USA

[3] Auburn Univ, Dept Mech Engn, Auburn, AL 36830 USA

[4] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 09期

关键词：

MOSFETs; (100) silicon; piezoresistance; short channel devices; threshold;

D O I：

10.1109/16.944190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper demonstrates that the intrinsic piezoresistive response of the MOSFET channel is independent of length. The reported fall-off of the piezoresistive response of the transistor in short channel devices is shown to be the result of parasitic series resistance in the source of the transistor. At the same time, the experimental results demonstrate that the threshold voltage of the devices is essentially independent of stress. The results are verified for three independent processes.

引用

页码：2009 / 2015

页数：7

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