EVALUATION OF PIEZORESISTIVE COEFFICIENT VARIATION IN SILICON STRESS SENSORS USING A 4-POINT BENDING TEST FIXTURE

被引：79

作者：

BEATY, RE ^{[1
]}

JAEGER, RC ^{[1
]}

SUHLING, JC ^{[1
]}

JOHNSON, RW ^{[1
]}

BUTLER, RD ^{[1
]}

机构：

[1] AUBURN UNIV,DEPT MECH ENGN,AUBURN,AL 36849

来源：

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1992年 / 15卷 / 05期

关键词：

D O I：

10.1109/33.180057

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, a study of the variation of the piezoresistive coefficients from several rosettes on the same die, the same wafer, and finally at different doping levels across a number of wafers has been presented. A thorough error analysis of the method of applying a known uniaxial state of stress using a four-point bending (4PB) fixture was completed. A sensor error analysis demonstrated that it is very difficult to determine accurate values for the sum (pi11 + pi12) using the common two-element rosette, particularly in p-type material. However, an empirical equation has been found that provides an estimate for this coefficient. The second piezoresistive coefficient pi44 can be measured accurately. However, the results presented for pi44 differ from those of previous authors by some 33%. Thus it appears necessary to measure this value for a given wafer lot.

引用

页码：904 / 914

页数：11

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