Valence-band warping in tight-binding models

被引:19
作者
Boykin, TB [1 ]
Gamble, LJ
Klimeck, G
Bowen, RC
机构
[1] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA
[2] Univ Alabama, LICOS, Huntsville, AL 35899 USA
[3] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 11期
关键词
D O I
10.1103/PhysRevB.59.7301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The spin-orbit nearest-neighbor sp(3)s* model is widely believed able to reproduce accurately the valence bands of most m-V and group-IV semiconductors, essential for modeling the in-plane dispersion of valence- and inter-band quantum heterostructures. To check this belief, we study valence-band warping in the spin-orbit sp(3)s* model including interactions up to second-nearest-neighbor, providing exact, analytic formulas for the [110] and [111] light- and heavy-hole masses; Surprisingly, we find that the second-nearest-neighbor model offers significantly more flexibility in fitting these masses independently of those along [001] than does the nearest-neighbor model. [S0163-1829(99)10007-9].
引用
收藏
页码:7301 / 7304
页数:4
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