Incorporation of incompleteness in the k center dot p perturbation theory

被引:35
作者
Boykin, TB
机构
[1] Department of Electrical and Computer Engineering, University of Alabama in Huntsville, Huntsville
来源
PHYSICAL REVIEW B | 1995年 / 52卷 / 23期
关键词
D O I
10.1103/PhysRevB.52.16317
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The k . p perturbation expansion for the energy of a nondegenerate band, familiar from solid-state texts, provides a convenient method for calculating the effective mass of the band in terms of the eigenstates of the system. As such, it would seem particularly useful in fitting the parameters of an empirical tight-binding model. Unfortunately, this expression is incorrect when applied to a model having an incomplete basis. We find that the correct expression may be derived from the usual result if the incompleteness of the basis is properly taken into account. In addition, since degenerate bands are often of interest, we discuss the correct calculation of their curvatures.
引用
收藏
页码:16317 / 16320
页数:4
相关论文
共 7 条
[1]  
BLOUNT EI, 1962, SOLID STATE PHYS, V13, P305
[2]   CURRENT-VOLTAGE CALCULATIONS FOR INAS/ALSB RESONANT-TUNNELING DIODES [J].
BOYKIN, TB .
PHYSICAL REVIEW B, 1995, 51 (07) :4289-4295
[3]  
BYRON FW, 1970, MATH CLASSICAL QUANT, P198
[4]   ELECTROMAGNETIC-FIELDS AND DIELECTRIC RESPONSE IN EMPIRICAL TIGHT-BINDING THEORY [J].
GRAF, M ;
VOGL, P .
PHYSICAL REVIEW B, 1995, 51 (08) :4940-4949
[5]  
HARRISON WA, 1979, SOLID STATE THEORY, P140
[6]   A SEMI-EMPIRICAL TIGHT-BINDING THEORY OF THE ELECTRONIC-STRUCTURE OF SEMICONDUCTORS [J].
VOGL, P ;
HJALMARSON, HP ;
DOW, JD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (05) :365-378
[7]   TIGHT-BINDING REPRESENTATION OF THE OPTICAL MATRIX-ELEMENTS - THEORY AND APPLICATIONS [J].
VOON, LCLY ;
RAMMOHAN, LR .
PHYSICAL REVIEW B, 1993, 47 (23) :15500-15508