Reverse current in SI GaAs pixel detectors

被引：13

作者：

Cola, A ^{[1
]}

机构：

[1] CNR, Ist Studio Nuovi Mat Elettron, IME, I-73100 Lecce, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1998年 / 410卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(98)00167-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A study of the carrier transport mechanism has been carried out on semi-insulating GaAs X-ray detectors. The aim is to analyze the excess current (larger than thermionic values), breakdown mechanisms and non-uniformities of the electric field in actual devices. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：85 / 91

页数：7

共 14 条

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