ELECTRICAL CHARACTERIZATION AND DETECTION PERFORMANCES OF VARIOUS SEMIINSULATING GAAS CRYSTALS FOR LOW-ENERGY GAMMA-RAYS

被引：5

作者：

BERTOLUCCI, E

BOTTIGLI, U

COLA, A

FANTACCI, ME

STEFANINI, A

VASANELLI, L

机构：

[1] CNR,IST MAT ELETTRON,LECCE,ITALY

[2] IST NAZL FIS NUCL,PISA,ITALY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 04期

关键词：

D O I：

10.1109/23.467841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to investigate the correlation between the electrical characteristics of the semi-insulating GaAs and its properties as a possible detector for low energy gamma-rays, we have measured, for various materials, the forward and the reverse I-V characteristic, the capacitance as a function of the frequency at various bias voltages and the capacitance as a function of the bias voltage at various frequencies. To measure the charge collection efficiency, the energy resolution and the detection efficiency as a function of the bias voltage the crystals have been irradiated with 22, 60, 88 and 122 keV photons. The results are discussed and a comparison between materials from various factories, of different thickness and equipped with different contacts is also presented.

引用

页码：254 / 257

页数：4

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