INFLUENCE OF ELECTRON TRAPS ON CHARGE-COLLECTION EFFICIENCY IN GAAS RADIATION DETECTORS

被引:65
作者
NAVA, F
CANALI, C
CASTALDINI, A
CAVALLINI, A
DAURIA, S
DELPAPA, C
FRIGERI, C
ZANOTTI, L
CETRONIO, A
LANZIERI, C
ZICHICHI, A
机构
[1] UNIV BOLOGNA,DIPARTMENTO FIS,BOLOGNA,ITALY
[2] UNIV MODENA,FAC INGN,MODENA,ITALY
[3] INFN,BOLOGNA,ITALY
[4] CNR,MASPEC,PARMA,ITALY
[5] ALENIA SPA,ROME,ITALY
[6] CERN,GENEVA,SWITZERLAND
关键词
D O I
10.1016/0168-9002(94)90617-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
This paper deals with the interpretation of the charge-collection efficiency for minimum ionizing particles in terms of electron traps in semi-insulating liquid encapsulated Czochralski gallium arsenide detectors fabricated with thicknesses of 80 mu m, 200 mu m, and 300 mu m. The results, obtained within the context of the RD-8 project, show that low values of charge-collection efficiency cannot be ascribed primarily to the presence of high concentrations of EL2 defects. Possible ways of increasing the charge-collection efficiency are briefly addressed.
引用
收藏
页码:156 / 159
页数:4
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