PHOTOQUENCHING PHENOMENON ENHANCED BY PROTON IRRADIATION IN SEMI-INSULATING GAAS

被引：9

作者：

KURIYAMA, K

TAKAHASHI, H

KAWAHARA, H

HAYASHI, N

WATANABE, H

SAKAMOTO, I

KOHNO, I

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,TOKYO 184,JAPAN

[2] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

[3] INST PHYS & CHEM RES,WAKO,SAITAMA 31501,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 12期

关键词：

D O I：

10.1063/1.346855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In undoped semi-insulating GaAs, we have found that the quenching phenomena of photoconductance and infrared absorption are enhanced by proton irradiation above 10(13) / cm2, accompanied by an increase in near-band-edge infrared absorption. These phenomena disappear with the annihilation of the proton-induced near-band absorption by annealing at 350-degrees-C. It is suggested that the enhanced photoquenching phenomena arise from the increase in the quenchable component due to the transition from the ionized midgap electron trap (EL2+) to the neutral EL2-degrees.

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页码：6517 / 6519

页数：3

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