PHOTOQUENCHING PHENOMENON ENHANCED BY PROTON IRRADIATION IN SEMI-INSULATING GAAS

被引:9
作者
KURIYAMA, K
TAKAHASHI, H
KAWAHARA, H
HAYASHI, N
WATANABE, H
SAKAMOTO, I
KOHNO, I
机构
[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,TOKYO 184,JAPAN
[2] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
[3] INST PHYS & CHEM RES,WAKO,SAITAMA 31501,JAPAN
关键词
D O I
10.1063/1.346855
中图分类号
O59 [应用物理学];
学科分类号
摘要
In undoped semi-insulating GaAs, we have found that the quenching phenomena of photoconductance and infrared absorption are enhanced by proton irradiation above 10(13) / cm2, accompanied by an increase in near-band-edge infrared absorption. These phenomena disappear with the annihilation of the proton-induced near-band absorption by annealing at 350-degrees-C. It is suggested that the enhanced photoquenching phenomena arise from the increase in the quenchable component due to the transition from the ionized midgap electron trap (EL2+) to the neutral EL2-degrees.
引用
收藏
页码:6517 / 6519
页数:3
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