QUENCHING AND RECOVERY SPECTRA OF MIDGAP LEVELS (EL2) IN SEMIINSULATING GAAS MEASURED BY DOUBLE-BEAM PHOTOCONDUCTIVITY

被引：15

作者：

HARIU, T

SATO, T

KOMORI, H

MATSUSHITA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.338200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1068 / 1072

页数：5

共 10 条

[1] IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

ELLIOTT, K ;

CHEN, RT ;

GREENBAUM, SG ;

WAGNER, RJ .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :907-909

[2]

LAGOWSKI J, 1982, SEMI INSULATING 3 5, P154

[3] QUENCHING EFFECT OF LUMINESCENCE IN BULK SEMI-INSULATING GAAS [J].

LEYRAL, P ;

VINCENT, G ;

NOUAILHAT, A ;

GUILLOT, G .

SOLID STATE COMMUNICATIONS, 1982, 42 (01) :67-69

[4]

LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904

[5] PHOTOLUMINESCENT DETERMINATION OF MN CONCENTRATION AND ITS DIFFUSION IN SEMI-INSULATING GAAS [J].

SASAKI, Y ;

SATO, T ;

MATSUSHITA, K ;

HARIU, T ;

SHIBATA, Y .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1109-1113

[6] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J].

VANVECHTEN, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :423-429

[7] PHOTOELECTRIC MEMORY EFFECT IN GAAS [J].

VINCENT, G ;

BOIS, D ;

CHANTRE, A .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3643-3649

[8]

WOERNER R, 1982, APPL PHYS LETT, V40, P141

[9] PERSISTENT PHOTOLUMINESCENCE QUENCHING OF 0.68-EV EMISSION IN UNDOPED SEMI-INSULATING GAAS [J].

YU, PW .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :330-332

[10] DEEP PHOTO-LUMINESCENCE BAND RELATED TO OXYGEN IN GALLIUM-ARSENIDE [J].

YU, PW ;

WALTERS, DC .

APPLIED PHYSICS LETTERS, 1982, 41 (09) :863-865

← 1 →