PHOTOLUMINESCENT DETERMINATION OF MN CONCENTRATION AND ITS DIFFUSION IN SEMI-INSULATING GAAS

被引：5

作者：

SASAKI, Y

SATO, T

MATSUSHITA, K

HARIU, T

SHIBATA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 04期

关键词：

D O I：

10.1063/1.334553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1109 / 1113

页数：5

共 13 条

[1] THE EFFECT OF HYDROGEN CHEMISORPTION ON GAAS(100) AND GAAS(1BAR1BAR1BAR) [J].

BRINGANS, RD ;

BACHRACH, RZ .

SOLID STATE COMMUNICATIONS, 1983, 45 (02) :83-86

[2]

Ilegems M., 1975, J APPL PHYS, V46, P3059

[3] REDISTRIBUTION OF MANGANESE AFTER ANNEALING OF GAAS IMPLANTED WITH SI+ AND SE+ [J].

KANBER, H ;

FENG, M ;

WHELAN, JM .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :960-962

[4] THERMAL-CONVERSION OF GAAS [J].

KLEIN, PB ;

NORDQUIST, PER ;

SIEBENMANN, PG .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4861-4869

[5] THERMALLY CONVERTED SURFACE-LAYERS IN SEMI-INSULATING GAAS [J].

LUM, WY ;

WIEDER, HH .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :213-215

[6] THERMAL-DEGRADATION OF HOMOEPITAXIAL GAAS INTERFACES [J].

LUM, WY ;

WIEDER, HH ;

KOSCHEL, WH ;

BISHOP, SG ;

MCCOMBE, BD .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :1-3

[7] PLASMA-ASSISTED EPITAXIAL-GROWTH OF GAAS AND GASB LAYERS IN HYDROGEN PLASMA [J].

MATSUSHITA, K ;

SATO, T ;

SATO, Y ;

SUGIYAMA, Y ;

HARIU, T ;

SHIBATA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1092-1096

[8]

SZE SM, PHYSICS SEMICONDUCTO, P68

[9]

TAJIMA MJ, 1978, APPL PHYS LETT, V35, P719

[10]

WATANABE K, 1981, I PHYS C SER, V63, P383

← 1 2 →