共 18 条
[2]
DOSEN M, 1983, 44TH AUT M JAP SOC A
[3]
S-DOPING OF MBE-GASB WITH H2S GAS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981, 20 (12)
:L893-L896
[4]
HABEGGER MA, 1965, PHYS REV, V138, P598
[6]
LUMINESCENCE AND PHOTOCONDUCTIVITY OF UNDOPED P-GASB
[J].
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
1972, 12 (01)
:169-+
[8]
MANASEVIT HM, 1979, J ELECTROCHEM SOC, V126, P2031, DOI 10.1149/1.2128849
[9]
MANNOU M, 1983, M I ELECTRICAL ENG J, P31
[10]
HEAVILY TE-DOPED GAAS-LAYERS BY PLASMA-ASSISTED EPITAXY
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1983, 22 (09)
:L602-L604