PLASMA-ASSISTED EPITAXIAL-GROWTH OF GAAS AND GASB LAYERS IN HYDROGEN PLASMA

被引:13
作者
MATSUSHITA, K
SATO, T
SATO, Y
SUGIYAMA, Y
HARIU, T
SHIBATA, Y
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关键词
D O I
10.1109/T-ED.1984.21668
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1092 / 1096
页数:5
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