HEAVILY TE-DOPED GAAS-LAYERS BY PLASMA-ASSISTED EPITAXY

[1] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 651 - 653

[2] NON-ALLOYED AND INSITU OHMIC CONTACTS TO HIGHLY DOPED N-TYPE GAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) FOR FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 951 - 954

[3] PLASMA-ASSISTED DEPOSITION AND EPITAXY OF GAAS FILMS [J]. THIN SOLID FILMS, 1981, 80 (1-3) : 235 - 239

[4] HARIU T, 1982, I PHYS C SER, V65, P141

[5] PULSED ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 546 - 548

[6] NON-ALLOYED OHMIC CONTACTS TO N-GAAS BY PULSE-ELECTRON-BEAM-ANNEALED SELENIUM IMPLANTS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 337 - 339

[7] GE INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY - A THERMODYNAMIC STUDY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2108 - 2113

[8] NON-ALLOYED OHMIC CONTACTS TO ELECTRON-BEAM-ANNEALED SE-ION-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 597 - 599

[9] PLASMA-ASSISTED DEPOSITION OF GAAS THIN-FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 183 - 186

[10] INSITU OHMIC-CONTACT FORMATION TO N-GAAS AND P-GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1022 - 1025

[1] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 651 - 653

[2] NON-ALLOYED AND INSITU OHMIC CONTACTS TO HIGHLY DOPED N-TYPE GAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY (MBE) FOR FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 951 - 954

[3] PLASMA-ASSISTED DEPOSITION AND EPITAXY OF GAAS FILMS [J]. THIN SOLID FILMS, 1981, 80 (1-3) : 235 - 239

[4] HARIU T, 1982, I PHYS C SER, V65, P141

[5] PULSED ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 546 - 548

[6] NON-ALLOYED OHMIC CONTACTS TO N-GAAS BY PULSE-ELECTRON-BEAM-ANNEALED SELENIUM IMPLANTS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 337 - 339

[7] GE INCORPORATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY - A THERMODYNAMIC STUDY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2108 - 2113

[8] NON-ALLOYED OHMIC CONTACTS TO ELECTRON-BEAM-ANNEALED SE-ION-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 597 - 599

[9] PLASMA-ASSISTED DEPOSITION OF GAAS THIN-FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 183 - 186

[10] INSITU OHMIC-CONTACT FORMATION TO N-GAAS AND P-GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1022 - 1025