PLASMA-ASSISTED DEPOSITION OF GAAS THIN-FILMS

[1] GROWTH OF POLYCRYSTALLINE GAAS FOR SOLAR-CELL APPLICATIONS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (04) : 346 - 352

[2] THIN-FILM GALLIUM-ARSENIDE SOLAR-CELLS ON TUNGSTEN-GRAPHITE SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 557 - 559

[3] THIN-FILM GAAS SOLAR-CELLS WITH GRAIN-BOUNDARY EDGE PASSIVATION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 699 - 701

[4] EFFICIENCY CALCULATIONS FOR THIN-FILM POLYCRYSTALLINE SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 392 - 396

[5] IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5710 - 5713

[6] MURAYAMA Y, 1974, JPN J APPL PHYS, P459

[7] NAGASHIMA Y, 1972, T I ELECTR ENG JPN A, V92, P22

[8] SCHOTTKY-BARRIER SOLAR-CELL ON SLICED POLYCRYSTALLINE GAAS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 401 - 403

[1] GROWTH OF POLYCRYSTALLINE GAAS FOR SOLAR-CELL APPLICATIONS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1978, 22 (04) : 346 - 352

[2] THIN-FILM GALLIUM-ARSENIDE SOLAR-CELLS ON TUNGSTEN-GRAPHITE SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 557 - 559

[3] THIN-FILM GAAS SOLAR-CELLS WITH GRAIN-BOUNDARY EDGE PASSIVATION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 699 - 701

[4] EFFICIENCY CALCULATIONS FOR THIN-FILM POLYCRYSTALLINE SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 392 - 396

[5] IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5710 - 5713

[6] MURAYAMA Y, 1974, JPN J APPL PHYS, P459

[7] NAGASHIMA Y, 1972, T I ELECTR ENG JPN A, V92, P22

[8] SCHOTTKY-BARRIER SOLAR-CELL ON SLICED POLYCRYSTALLINE GAAS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 401 - 403