GROWTH OF POLYCRYSTALLINE GAAS FOR SOLAR-CELL APPLICATIONS

[1] AMICK JA, 1963, RCA REV, V24, P555

[2] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[3] CHERNOV AA, COMMUNICATION

[4] GUYLAI J, 1971, J APPL PHYS, V42, P3578

[5] HOVEL HJ, 1974, 12TH C REC IEEE PHOT, P913

[6] EFFICIENCY CALCULATIONS FOR THIN-FILM POLYCRYSTALLINE SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 392 - 396

[7] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +

[8] GAS-PHASE COMPOSITION AND EXTRANEOUS DEPOSITION IN GAAS VAPOR EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 35 (01) : 1 - 9

[9] TECHNOLOGY OF GAAS METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 476 - 483

[10] GASAS THIN-FILM SOLAR CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 26 - &

[1] AMICK JA, 1963, RCA REV, V24, P555

[2] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[3] CHERNOV AA, COMMUNICATION

[4] GUYLAI J, 1971, J APPL PHYS, V42, P3578

[5] HOVEL HJ, 1974, 12TH C REC IEEE PHOT, P913

[6] EFFICIENCY CALCULATIONS FOR THIN-FILM POLYCRYSTALLINE SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 392 - 396

[7] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +

[8] GAS-PHASE COMPOSITION AND EXTRANEOUS DEPOSITION IN GAAS VAPOR EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 35 (01) : 1 - 9

[9] TECHNOLOGY OF GAAS METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 476 - 483

[10] GASAS THIN-FILM SOLAR CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 26 - &