GAS-PHASE COMPOSITION AND EXTRANEOUS DEPOSITION IN GAAS VAPOR EPITAXY

被引：15

作者：

SHAW, DW ^{[1
]}

机构：

[1] TEXAS INSTR INC,DALLAS,TX 75222

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 35卷 / 01期

关键词：

D O I：

10.1016/0022-0248(76)90236-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：1 / 9

页数：9

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