NON-ALLOYED OHMIC CONTACTS TO ELECTRON-BEAM-ANNEALED SE-ION-IMPLANTED GAAS

[1] EFFECT OF SI3N4 ENCAPSULATION ON THE LASER-ANNEALING BEHAVIOR OF GAAS [J]. ELECTRONICS LETTERS, 1979, 15 (15) : 447 - 448

[2] OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 965 - 967

[3] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 651 - 653

[4] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[5] CHANGES IN ELECTRON CONCENTRATION OF DONOR-DOPED GAAS CRYSTALS CAUSED BY ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) : 2287 - +

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] GRINSHTEIN PM, 1975, SOV PHYS SEMICOND+, V9, P725

[8] HOWER PL, 1971, SEMICONDUCTORS SEM A, V7, P147

[9] PULSED ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 546 - 548

[10] SILICON SOLAR-CELLS BY HIGH-SPEED LOW-TEMPERATURE PROCESSING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 429 - 432

[1] EFFECT OF SI3N4 ENCAPSULATION ON THE LASER-ANNEALING BEHAVIOR OF GAAS [J]. ELECTRONICS LETTERS, 1979, 15 (15) : 447 - 448

[2] OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (11) : 965 - 967

[3] NON-ALLOYED OHMIC CONTACTS TO NORMAL-GAAS BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 651 - 653

[4] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[5] CHANGES IN ELECTRON CONCENTRATION OF DONOR-DOPED GAAS CRYSTALS CAUSED BY ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) : 2287 - +

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] GRINSHTEIN PM, 1975, SOV PHYS SEMICOND+, V9, P725

[8] HOWER PL, 1971, SEMICONDUCTORS SEM A, V7, P147

[9] PULSED ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 546 - 548

[10] SILICON SOLAR-CELLS BY HIGH-SPEED LOW-TEMPERATURE PROCESSING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 429 - 432