EFFECT OF SI3N4 ENCAPSULATION ON THE LASER-ANNEALING BEHAVIOR OF GAAS

被引：8

作者：

BADAWI, MH

AKINTUNDE, JA

SEALY, BJ

STEPHENS, KG

机构：

[1] Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 15期

关键词：

Annealing; Encapsulation; Gallium arsenide; III-V semiconductors; Laser beam applications;

D O I：

10.1049/el:19790321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

When semi-insulating GaAs samples are coated with pyrolytically deposited Si3N4 layers and subsequently irradiated with a Q-switched ruby laser with energy densities > 0·3 J/cm2, it is found that a thin layer (0·1–0·25 µm) of the underlying GaAs substrates becomes n-type. This phenomenon may be the reason why, in previous work on laser annealing of donor implanted GaAs samples, the percentage electrical activity increased when samples were coated with Si3N4. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：447 / 448

页数：2

共 5 条

[1] LASER ANNEALING OF CAPPED AND UNCAPPED GAAS
KULAR, SS
SEALY, BJ
BADAWI, MH
STEPHENS, KG
SADANA, D
BOOKER, GR
[J]. ELECTRONICS LETTERS, 1979, 15 (14) : 413 - 414
[2] Sealy B. J., 1978, AIP Conference Proceedings, P610
[3] ELECTRICAL-PROPERTIES OF LASER-ANNEALED DONOR-IMPLANTED GAAS
SEALY, BJ
KULAR, SS
STEPHENS, KG
CROFT, R
PALMER, A
[J]. ELECTRONICS LETTERS, 1978, 14 (22) : 720 - 721
[4] Tandon J. L., 1978, AIP Conference Proceedings, P616
[5] WOODCOCK JM, 1978, P ION BEAM MODIFICAT

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