THERMAL-DEGRADATION OF HOMOEPITAXIAL GAAS INTERFACES

被引：45

作者：

LUM, WY

WIEDER, HH

KOSCHEL, WH

BISHOP, SG

MCCOMBE, BD

机构：

[1] USN,ELECTR LAB CTR,SAN DIEGO,CA 92152

[2] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 01期

关键词：

D O I：

10.1063/1.89215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1 / 3

页数：3

共 13 条

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