OCCURRENCE OF A HIGH RESISTANCE LAYER IN GAAS SUBSTRATE THROUGH VAPOR EPITAXIAL PROCESS

被引：9

作者：

HASEGAWA, F

SAITO, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 12期

关键词：

D O I：

10.1143/JJAP.7.1540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1540 / &

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共 3 条

[1] EPITAXIAL GROWTH OF DOPED AND PURE GAAS IN AN OPEN FLOW SYSTEM [J].

EFFER, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) :1020-&

[2] IMPURITY TRANSFER IN GAAS VAPOR GROWTH AND CARRIER-CONCENTRATION PROFILES OF GROWN FILMS [J].

HASEGAWA, F ;

SAITO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (11) :1342-&

[3] OCCURENCE OF HIGH RESISTANCE LAYER AT VAPOR EPITAXIAL GAAS FILM-SUBSTRATE INTERFACE [J].

HASEGAWA, F ;

SAITO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) :1125-&